EMH2408
Embossed Taping Speci ? cation
EMH2408-TL-H
No. A1170-5/7
相关PDF资料
EMH2409-TL-H MOSFET N-CH DUAL 30V 4A EMH8
EMH2411R-TL-H MOSFET N-CH DUAL 30V 5A EMH8
EMH2412-TL-H MOSFET N-CH DUAL 24V 6A EMH8
EMH2604-TL-H MOSFET N/P-CH 20V 4A EMH8
EMH2801-TL-H MOSFET/SBD P-CH EMH8
ENW1-EW07 LAMP INCAND T1.5 NEO WEDGE 14V
ENW1-EW87 LAMP T1-1/2 NEO WEDGE 14V 0.140A
ENW2-EW10/GRA LAMP INCAND T1.5 NEO WEDGE 14V
相关代理商/技术参数
EMH2409 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications
EMH2409_12 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
EMH2409-TL-H 功能描述:MOSFET PCH+NCH 1.8V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
EMH2411R 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
EMH2411R_12 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
EMH2411R-TL-H 功能描述:MOSFET NCH+NCH 2.5V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
EMH2412 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications
EMH2412_12 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications